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BFS 480 NPN Silicon RF Transistor * For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA * fT = 7GHz F = 1.5dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 10 1.2 mW 80 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 112 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 470 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V A 100 nA 100 A 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-16-1996 BFS 480 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 5 7.5 0.23 0.1 0.23 - GHz pF 0.4 dB 1.5 2 - IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 14 9.5 18 14 - IC = 3 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| Semiconductor Group 3 Dec-16-1996 BFS 480 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 100 mW Ptot 80 70 60 50 TS TA 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 BFS 480 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.40 10 GHz pF 10V 5V 3V 2V Ccb 0.30 fT 8 7 0.25 6 0.20 5 0.15 4 0.10 3 2 1 2 4 6 8 V 12 0 2 4 6 8 1V 0.7V 0.05 0.00 0 VR mA IC 12 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB G 18 8V 2V G 13 12 11 8V 3V 2V 16 1V 14 0.7V 12 10 9 8 7 0.7V 1V 10 6 8 0 2 4 6 8 mA IC 12 5 0 2 4 6 8 mA IC 12 Semiconductor Group 5 Dec-16-1996 BFS 480 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 22 IC=3mA dB 0.9GHz dBm 8V 5V 3V 2V G 16 14 12 0.9GHz 1.8GHz IP3 14 10 6 1V 10 8 6 4 2 0 0 1 2 3 4 5 6 7 1.8GHz 2 -2 -6 -10 -14 8 V 10 0 2 4 6 8 V CE mA IC 11 Power Gain Gma, Gms = f(f) VCE = Parameter 30 dB Power Gain |S21|2= f(f) VCE = Parameter 20 IC=3mA IC=3mA dB 26 G 24 22 G 16 14 20 18 16 10 14 12 10 8 6 0.0 0.5 1.0 1.5 2.0 2.5 8V 1V 0.7V GHz f 3.5 8 8V 6 4 0.0 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 12 Semiconductor Group 6 Dec-16-1996 |
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